Ferroelectric RAM Market Applications - Key Expansion Strategies, Upcoming Trends and Regional Forecast by 2023
Overview The FRAM Market is expected to reach USD 343.2 Million by 2025 at a CAGR of 3.78% during the forecast period. Market Research Future (MRFR), in its report, envelops segmentation and drivers to provide a better glimpse of the market in the coming years. Ferroelectric RAM is a non-volatile memory that features higher speed, and endurance to multiple read/write capabilities than other random-access memory (RAM) storage. FRAM components consume less power as compared to other RAM components, and therefore, are used for applications in consumer electronic devices such as personal digital assistants, power meters, handheld phones, smart cards, and security systems. Competitive Analysis The key players of the Global FRAM Market are Fujitsu Ltd (Japan), Rohm Co., Ltd (Japan), Texas Instruments (US), and Cypress Semiconductor Corp (US), among others. In March 2018, Cypress Semiconductor Corp. announced that MikroElektronika (MikroE), an embedded systems retailer, has selected Cypress ...